?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGAF20N60SMD rev. c1 FGAF20N60SMD 600 v 20 a field stop igbt april 2013 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. j unction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current 60 a i f diode forward current @ t c = 25 o c 20 a diode forward current @ t c = 100 o c 10 a i fm (1) pulsed diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 o c 62.5 w maximum power dissipation @ t c = 100 o c 31.3 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c g e c FGAF20N60SMD 600 v, 20 a field stop igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.7 v(typ.) @ i c = 20 a ? high input impedance ? fast swiching: e off = 7 uj/a ? tightened parameter distribution ? rohs compliant applications ? sewing machine, cnc ? home appliances, motor-control general description using novel field stop igbt technology, fairchild ? s new series of field stop 2 nd generation igbts offer the optimum perfor- mance for solar inverter, ups, welder and pfc appli cations where low conduction and switching losses are essen tial.
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGAF20N60SMD rev. c1 thermal characteristics package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 2.0 o c / w r jc (diode) thermal resistance, junction to case - 4.0 o c / w r ja thermal resistance, junction to ambient - 40 o c / w device marking device package reel size tape width quant ity FGAF20N60SMD FGAF20N60SMD to3-pf - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.62 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.5 4.7 6.0 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v - 1.7 - v i c = 20a , v ge = 15v, t c = 175 o c - 1.9 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 925 - pf c oes output capacitance - 89 - pf c res reverse transfer capacitance - 30 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 12 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 91 - ns t f fall time - 21 27 ns e on turn-on switching loss - 452 - uj e off turn-off switching loss - 141 187 uj e ts total switching loss - 593 - uj t d(on) turn-on delay time v cc = 400v, i c = 20a, r g = 10 , v ge = 15v, inductive load, t c = 175 o c - 12 - ns t r rise time - 19 - ns t d(off) turn-off delay time - 93 - ns t f fall time - 16 - ns e on turn-on switching loss - 667 - uj e off turn-off switching loss - 317 - uj e ts total switching loss - 984 - uj
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGAF20N60SMD rev. c1 electrical characteristics of the igbt (continued) electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 20a, v ge = 15v - 64 - nc q ge gate to emitter charge - 6.2 - nc q gc gate to collector charge - 32 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 10a t c = 25 o c - 2.3 - v t c = 175 o c - 1.67 - e rec reverse recovery energy i f =10a, di f /dt = 200a/ s t c = 175 o c - 13.8 - uj t rr diode reverse recovery time t c = 25 o c - 26.7 - ns t c = 175 o c - 88.2 - q rr diode reverse recovery charge t c = 25 o c - 42 - nc t c = 175 o c - 245 -
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGAF20N60SMD rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 10 20 30 40 50 60 65 v ge = 8v 10v 20v t c = 25 o c 15v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 10 20 30 40 50 60 65 20v t c = 175 o c 15v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 1.0 2.0 3.0 4.0 0 10 20 30 40 50 60 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 12 0 10 20 30 40 50 60 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 40a 20a i c = 10a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 5 10 15 20 i c = 10a 20a 40a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGAF20N60SMD rev. c1 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volt age vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristi cs vs. gate resistance 4 8 12 16 20 0 5 10 15 20 i c = 10a 20a 40a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 10a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 20 40 60 80 0 3 6 9 12 15 common emitter t c = 25 o c 400v 300v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 5 10 15 20 25 30 20 100 1000 2000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 10 20 30 40 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 1 10 100 1000 0.01 0.1 1 10 100 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGAF20N60SMD rev. c1 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance colle ctor current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 1 10 100 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 20a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 10 20 30 40 1 10 100 1000 10000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a]
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGAF20N60SMD rev. c1 typical performance characteristics figure 19. current derating figure 20. power dissipation figure 21. load current vs. frequency figure 22. forward characteristics figure 23. reverse current figure 24. stored charge 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 common emitter v ge = 15v p d , power dissipation [w] t c , case temperature [ o c] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 common emitter v ge = 15v i d , drain current [a] t c , case temperature [ o c] 1k 10k 100k 1m 0 50 100 150 200 250 t c = 75 o c v cc = 400v load current : peak of square wave duty cycle : 50% t c = 100 o c powe dissipation = 31.3 w t c = 100 o c collector current, i c [a] switching frequency, f [hz] 0 1 2 3 4 1 10 100 t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] 0.5 50 200 400 600 0.01 0.1 1 10 100 1000 reverse current , i r [ ? a] reverse voltage, v r [v] t j = 175 o c t j = 25 o c t j = 100 o c 5 10 15 20 0 25 50 75 di/dt = 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forward current, i f [a]
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGAF20N60SMD rev. c1 typical performance characteristics figure 25. reverse recovery time figure 26.transient thermal impedance of igbt figure 27.transient thermal impedance of diode 5 10 15 20 20 25 30 35 40 di/dt = 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 3 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 5 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FGAF20N60SMD rev. c1 mechanical dimensions dimensions in millimeters to-3pf
FGAF20N60SMD 600 v 20 a field stop igbt ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FGAF20N60SMD rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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